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Si1046X
Vishay Siliconix
TYPICAL CHARACTERISTICS T A = 25 °C, unless otherwise noted
10
1.0
I D = 0.606 A
0. 8
1
0.1
0.01
0.001
T J = 150 °C
T J = 25 °C
0.6
0.4
0.2
0.0
T A = 125 °C
T A = 25 °C
0
0.3
0.6
0.9
1.2
0
1
2
3
4
5
1.0
0. 8
V SD - So u rce-to-Drain V oltage ( V )
Source-Drain Diode Forward Voltage
I D = 250 μ A
10
1
V GS - Gate-to-So u rce V oltage ( V )
R DS(on) vs. V GS vs Temperature
Limited b y R DS(on) *
1 ms
10 ms
100 ms
0.6
0.4
0.2
0.1
0.01
0.001
T A = 25 °C
Single P u lse
1s
10 s
DC
- 50
- 25
0
25
50
75
100
125
150
0.1
1
10
100
T J - Temperat u re (°C)
Threshold Voltage
V DS - Drain-to-So u rce V oltage ( V )
* V GS > minim u m V GS at w hich R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
2
1
D u ty Cycle = 0.5
0.2
N otes:
0.1
0.1
0.05
P DM
t 1
t 2
0.01
0.02
Single P u lse
t 1
1. D u ty Cycle, D =
t 2
2. Per Unit Base = R thJA = 540 °C/ W
3. T JM - T A = P DM Z thJA(t)
4. S u rface Mo u nted
10 -4
10 -3
10 -2
10 -1
1
1 0
100
6 0 0
Sq u are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74594 .
www.vishay.com
4
Document Number: 74594
S09-1225-Rev. C, 29-Jun-09
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